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25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode.

作者信息

Chen Hui-Wen, Kuo Ying-hao, Bowers John E

机构信息

Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA.

出版信息

Opt Express. 2010 Jan 18;18(2):1070-5. doi: 10.1364/OE.18.001070.

Abstract

We demonstrate a hybrid silicon modulator and switch operating up to 25 Gb/s with over 10 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm while the switch has switch time less than 35 ps and crosstalk smaller than -12 dB.

摘要

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