• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

用于神经形态计算应用的模拟纳米级光电突触

Analog Nanoscale Electro-Optical Synapses for Neuromorphic Computing Applications.

机构信息

Integrated Systems Laboratory, ETH Zurich, 8092 Zurich, Switzerland.

Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland.

出版信息

ACS Nano. 2021 Sep 28;15(9):14776-14785. doi: 10.1021/acsnano.1c04654. Epub 2021 Aug 30.

DOI:10.1021/acsnano.1c04654
PMID:34459580
Abstract

The typically nonlinear and asymmetric response of synaptic memristors to positive and negative electrical pulses makes the realization of accurate deep neural networks very challenging. Here, we integrate a two-terminal valence change memory (VCM) into a photonic/plasmonic circuit and show that the switching properties of this memristor become more gradual and symmetric under light irradiation. The added optical input acts on the VCM as a third, independent modulation channel. It locally heats the active area of the device, which enhances the generation of oxygen vacancies and broadens the resulting nanoscale conductive filaments. The measured conductance modulation of the VCM is then inserted into a neural network simulator. Using the MNIST data set of handwritten digits as an application, a light-enhanced recognition accuracy of 93.53% is demonstrated, similar to ideally performing memristors (94.86%) and much higher than those without light (67.37%). Notably, the optical signal does not increase the overall energy consumption by more than 3.2%. Finally, an approach to scale up our electro-optical technology is proposed, which could allow high-density, energy-efficient neuromorphic computing chips.

摘要

突触忆阻器对正、负电脉冲的典型非线性和不对称响应使得准确实现深度神经网络极具挑战性。在这里,我们将一个两端式的价态变化存储器(VCM)集成到一个光子/等离子体电路中,并表明该忆阻器的开关特性在光辐照下变得更加渐进和对称。所添加的光输入作为第三个独立的调制通道作用于 VCM。它局部加热器件的有源区,从而增强了氧空位的产生并拓宽了由此产生的纳米级导电丝。然后,将 VCM 的测量电导调制插入神经网络模拟器中。使用手写数字的 MNIST 数据集作为应用,演示了增强光识别精度为 93.53%,与理想的忆阻器(94.86%)相似,远高于没有光的情况(67.37%)。值得注意的是,光信号不会使总能耗增加超过 3.2%。最后,提出了一种扩展我们的光电技术的方法,这可能允许高密度、高能效的神经形态计算芯片。

相似文献

1
Analog Nanoscale Electro-Optical Synapses for Neuromorphic Computing Applications.用于神经形态计算应用的模拟纳米级光电突触
ACS Nano. 2021 Sep 28;15(9):14776-14785. doi: 10.1021/acsnano.1c04654. Epub 2021 Aug 30.
2
Nanoscale memristor device as synapse in neuromorphic systems.纳米级忆阻器器件作为神经形态系统中的突触。
Nano Lett. 2010 Apr 14;10(4):1297-301. doi: 10.1021/nl904092h.
3
Organic Memristor with Synaptic Plasticity for Neuromorphic Computing Applications.具有突触可塑性的有机忆阻器用于神经形态计算应用。
Nanomaterials (Basel). 2023 Feb 22;13(5):803. doi: 10.3390/nano13050803.
4
HfO /AlO Superlattice-Like Memristive Synapse.HfO/AlO 超晶格类忆阻突触
Adv Sci (Weinh). 2022 Jul;9(21):e2201446. doi: 10.1002/advs.202201446. Epub 2022 May 29.
5
Emerging Memristive Artificial Synapses and Neurons for Energy-Efficient Neuromorphic Computing.新兴忆阻人工突触和神经元用于高能效神经形态计算。
Adv Mater. 2020 Dec;32(51):e2004659. doi: 10.1002/adma.202004659. Epub 2020 Oct 1.
6
Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing.作为用于神经形态计算的人工突触的双极模拟忆阻器
Materials (Basel). 2018 Oct 26;11(11):2102. doi: 10.3390/ma11112102.
7
Memristor-based cellular nonlinear/neural network: design, analysis, and applications.基于忆阻器的细胞非线性/神经网络:设计、分析与应用。
IEEE Trans Neural Netw Learn Syst. 2015 Jun;26(6):1202-13. doi: 10.1109/TNNLS.2014.2334701. Epub 2014 Jul 21.
8
Controllable digital and analog resistive switching behavior of 2D layered WSe nanosheets for neuromorphic computing.用于神经形态计算的二维层状WSe纳米片的可控数字和模拟电阻开关行为。
Nanoscale. 2023 Mar 9;15(10):4801-4808. doi: 10.1039/d2nr06580k.
9
Biopolymer based artificial synapses enable linear conductance tuning and low-power for neuromorphic computing.基于生物聚合物的人工突触可实现线性电导率调节和低功耗,适用于神经形态计算。
Nanoscale. 2022 Sep 15;14(35):12898-12908. doi: 10.1039/d2nr01996e.
10
Memristor-Based Neuromorphic Chips.基于忆阻器的神经形态芯片。
Adv Mater. 2024 Apr;36(14):e2310704. doi: 10.1002/adma.202310704. Epub 2024 Jan 2.

引用本文的文献

1
Novel Solution-Processed FeO/WS Hybrid Nanocomposite Dynamic Memristor for Advanced Power Efficiency in Neuromorphic Computing.用于神经形态计算中提高功率效率的新型溶液法制备的FeO/WS混合纳米复合动态忆阻器
Adv Sci (Weinh). 2025 May;12(17):e2408133. doi: 10.1002/advs.202408133. Epub 2025 Mar 9.
2
Fully integrated multi-mode optoelectronic memristor array for diversified in-sensor computing.用于多样化片上传感器计算的全集成多模光电忆阻器阵列
Nat Nanotechnol. 2025 Jan;20(1):93-103. doi: 10.1038/s41565-024-01794-z. Epub 2024 Nov 8.
3
Single neuromorphic memristor closely emulates multiple synaptic mechanisms for energy efficient neural networks.
单个神经形态忆阻器紧密模拟多种突触机制,以实现高能效神经网络。
Nat Commun. 2024 Aug 13;15(1):6898. doi: 10.1038/s41467-024-51093-3.
4
A sensory memory processing system with multi-wavelength synaptic-polychromatic light emission for multi-modal information recognition.一种具有多波长突触多色发光的感觉记忆处理系统,用于多模式信息识别。
Nat Commun. 2023 May 8;14(1):2648. doi: 10.1038/s41467-023-38396-7.
5
Advances in Emerging Photonic Memristive and Memristive-Like Devices.新兴光子忆阻和类忆阻器件的进展。
Adv Sci (Weinh). 2022 Oct;9(28):e2105577. doi: 10.1002/advs.202105577. Epub 2022 Aug 9.