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由多壁碳纳米管制备低缺陷氧化石墨烯纳米带。

Lower-defect graphene oxide nanoribbons from multiwalled carbon nanotubes.

机构信息

Department of Chemistry, Rice University, MS 222, 6100 Main Street, Houston, Texas 77005, USA.

出版信息

ACS Nano. 2010 Apr 27;4(4):2059-69. doi: 10.1021/nn100118m.

Abstract

An improved method is described for the production of graphene oxide nanoribbons (GONRs) via longitudinal unzipping of multiwalled carbon nanotubes. The method produces GONRs with fewer defects and/or holes on the basal plane, maintains narrow ribbons <100 nm wide, and maximizes the high aspect ratio. Changes in the reaction conditions such as acid content, time, and temperature were investigated. The new, optimized method which introduces a second, weaker acid into the system, improves the selectivity of the oxidative unzipping presumably by in situ protection of the vicinal diols formed on the basal plane of graphene during the oxidation, and thereby prevents their overoxidation and subsequent hole generation. The optimized GONRs exhibit increased electrical conductivity over those chemically reduced nanoribbons produced by previously reported procedures.

摘要

一种改进的方法被描述用于通过多壁碳纳米管的纵向解理来生产氧化石墨烯纳米带(GONRs)。该方法产生的 GONRs 在基面的缺陷和/或孔较少,保持<100nm 宽的窄带,并最大限度地提高高纵横比。研究了反应条件如酸含量、时间和温度的变化。新的优化方法在体系中引入第二种较弱的酸,通过原位保护石墨烯基面形成的邻二醇,提高了氧化解理的选择性,从而防止了它们的过度氧化和随后的孔生成。与之前报道的通过化学还原法制备的纳米带相比,优化后的 GONRs 表现出更高的电导率。

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