IBM Research, T. J. Watson Research Center, Yorktown Heights, New York 10598, USA.
Opt Lett. 2010 Apr 1;35(7):1013-5. doi: 10.1364/OL.35.001013.
We report the performance of NiSi-based heaters integrated with submicrometer silicon waveguides. The heaters were fabricated using a standard complementary metal-oxide-semiconductor (CMOS) silicidation process on a thin silicon slab laterally connected with a silicon rib waveguide. The intrinsic properties of such NiSi waveguide heaters were characterized by using them as thermo-optic phase shifters in a Mach-Zehnder interferometer. The power consumption P(pi) for obtaining a pi phase shift was measured to be as low as 20 mW, using CMOS-compatible drive voltages. The time constant of the thermo-optic response was less than 2.8 mus. Simulations suggest that a further reduction in the power consumption P(pi) is feasible.
我们报告了基于 NiSi 的加热器与亚微米硅波导集成的性能。这些加热器是使用标准互补金属氧化物半导体（CMOS）硅化物工艺在薄硅片上制造的，该硅片与硅脊波导横向连接。这种 NiSi 波导加热器的固有特性是通过将其用作马赫-曾德尔干涉仪中的热光相移器来进行表征的。使用 CMOS 兼容的驱动电压，测量得到获得 pi 相移所需的功率消耗 P(pi)低至 20 mW。热光响应的时间常数小于 2.8 mus。模拟表明，进一步降低功率消耗 P(pi)是可行的。
