Center for Materials Theory, Rutgers University, Piscataway, New Jersey 08854, USA.
Phys Rev Lett. 2009 Nov 13;103(20):206402. doi: 10.1103/PhysRevLett.103.206402. Epub 2009 Nov 12.
Motivated by recent experimental interest in tunneling into heavy-electron materials, we present a theory for electron tunneling into a Kondo lattice. The passage of an electron into a Kondo lattice is accompanied by a simultaneous spin flip of the localized moments via cotunneling mechanism. We compute the tunneling current with the large-N mean field theory. In the absence of disorder, differential tunneling conductance exhibits two peaks separated by the hybridization gap. Disorder effects lead to the smearing of the gap resulting in a Fano line shape.
受近期对隧穿进入重电子材料实验研究的启发,我们提出了一个关于电子隧穿进入康登晶格的理论。电子进入康登晶格伴随着局域磁矩通过耦合隧道机制的同时自旋翻转。我们用大 N 平均场理论计算了隧穿电流。在没有无序的情况下,微分隧穿电导表现出两个由杂化能隙隔开的峰。无序效应导致能隙的展宽,从而导致费诺线形状。