Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
Phys Rev Lett. 2010 Jan 8;104(1):016601. doi: 10.1103/PhysRevLett.104.016601. Epub 2010 Jan 4.
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times T1 agree with the spin resonance and spin injection data, following a T(-3) temperature dependence. The valley anisotropy of T1 and the spin relaxation rates for hot electrons are predicted.
引入了一个现实的赝势模型来研究体硅中传导电子的声子诱导自旋弛豫。我们发现，在很宽的温度范围内，Elliott 和 Yafet 过程的惊人细微干扰会抑制先前被认为占主导地位的谷内自旋翻转散射的重要性。计算得到的自旋弛豫时间 T1 与自旋共振和自旋注入数据一致，遵循 T(-3)的温度依赖性。预测了 T1 的谷各向异性和热电子的自旋弛豫率。
