聚合物刷和无机氧化物杂化纳米电介质用于高性能有机晶体管。

Polymer brush and inorganic oxide hybrid nanodielectrics for high performance organic transistors.

机构信息

Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100191, China.

出版信息

J Phys Chem B. 2010 Apr 29;114(16):5315-9. doi: 10.1021/jp100928d.

DOI:10.1021/jp100928d

PMID:20373771

Abstract

A novel covalence-linked PMMA-SiO(2) hybrid nanodielectrics was prepared by grafting approximately 10 nm PMMA brush onto the SiO(2) (approximately 9 nm) surface, which effectively combines the respective merits of PMMA and SiO(2). As a result, the hybrid nanodielectrics exhibit excellent dielectric performance (e.g., low leakage density (<10(-7) A/cm(2) at 6 MV/cm), high breakdown voltage (7 MV/cm), high capacitance (142 nF/cm(2)), good operational stability, and good compatibility with organic semiconductors), and enable organic field-effect transistors (OFETs) to work with high performance and low voltage. These results may open a way to build ultrathin dielectrics for high performance transistor and circuit, as well as for microelectronics, nanoelectronics, and organic electronics.

摘要

一种新型的共价键联 PMMA-SiO2 杂化纳米电介质是通过将大约 10nm 的 PMMA 刷接枝到 SiO2（大约 9nm）表面上制备的，这有效地结合了 PMMA 和 SiO2 的各自优点。结果，杂化纳米电介质表现出优异的介电性能（例如，低泄漏密度（在 6MV/cm 时小于 10-7A/cm2）、高击穿电压（7MV/cm）、高电容（142nF/cm2））、良好的工作稳定性，以及与有机半导体的良好兼容性，使有机场效应晶体管（OFETs）能够以高性能和低电压工作。这些结果可能为高性能晶体管和电路以及微电子学、纳米电子学和有机电子学开辟了构建超薄电介质的途径。