Lu Li-Fang, Xu Zheng, Zhang Fu-Jun, Zhao Su-Ling, Song Dan-Dan, Li Jun-Ming, Wang Yong-Sheng, Xu Xu-Rong
Institute of Optoelectronics Technology, Beijing Jiaotong University and Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing 100044, China.
Guang Pu Xue Yu Guang Pu Fen Xi. 2010 Feb;30(2):504-7.
Nanocrystalline ZnS thin films were fabricated by glancing angle deposition (GLAD) technology in an electron beam evaporation system. Deposition was carried out in the custom vacuum chamber at a base pressure 3 x 10(-4) Pa, and the deposition rate was fixed at 0.2 nm x s(-1). ZnS films were deposited on pieces of indium tin oxide (ITO) substrates when the oblique angle of the substrate relative to the incoming molecular flux was set to 0 degrees, 80 degrees and 85 degrees off the substrate normal respectively. X-ray diffraction (XRD) spectra and scanning electron microscope (SEM) images showed that ZnS nanocrystalline films were formed on the substrates at different oblique angle, but the nanocolumn structure was only formed under the situation of alpha = 80 degrees and 85 degrees. The dynamics during the deposition process of the ZnS films at alpha = 0 degrees, 80 degrees and 85 degrees was analyzed. The transmitted spectra of ZnS thin films deposited on ITO substrates showed that the ZnS nanocolumn thin films could enhance the transmissivity in visible range. The ZnS nanocolumn could be used into electroluminescence device, and it would enhance the luminous efficiency of the device.
在电子束蒸发系统中，通过掠角沉积（GLAD）技术制备了纳米晶ZnS薄膜。沉积在定制的真空腔中进行，本底压力为3×10⁻⁴ Pa，沉积速率固定为0.2 nm·s⁻¹。当将衬底相对于入射分子流的倾斜角分别设置为相对于衬底法线偏离0度、80度和85度时，在氧化铟锡（ITO）衬底片上沉积ZnS薄膜。X射线衍射（XRD）光谱和扫描电子显微镜（SEM）图像表明，在不同倾斜角的衬底上形成了ZnS纳米晶薄膜，但仅在α = 80度和85度的情况下形成了纳米柱结构。分析了α = 0度、80度和85度时ZnS薄膜沉积过程中的动力学。沉积在ITO衬底上的ZnS薄膜的透射光谱表明，ZnS纳米柱薄膜可以提高可见光范围内的透射率。ZnS纳米柱可用于电致发光器件，并将提高该器件的发光效率。
