Micro and Nanotechnology Lab, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.
Nano Lett. 2012 Sep 12;12(9):4424-30. doi: 10.1021/nl300584r. Epub 2012 Aug 1.
We study graphene nanoribbon (GNR) interconnects obtained from graphene grown by chemical vapor deposition (CVD). We report low- and high-field electrical measurements over a wide temperature range, from 1.7 to 900 K. Room temperature mobilities range from 100 to 500 cm(2)·V(-1)·s(-1), comparable to GNRs from exfoliated graphene, suggesting that bulk defects or grain boundaries play little role in devices smaller than the CVD graphene crystallite size. At high-field, peak current densities are limited by Joule heating, but a small amount of thermal engineering allows us to reach ∼2 × 10(9) A/cm(2), the highest reported for nanoscale CVD graphene interconnects. At temperatures below ∼5 K, short GNRs act as quantum dots with dimensions comparable to their lengths, highlighting the role of metal contacts in limiting transport. Our study illustrates opportunities for CVD-grown GNRs, while revealing variability and contacts as remaining future challenges.
我们研究了通过化学气相沉积 (CVD) 生长的石墨烯制成的石墨烯纳米带 (GNR) 互连。我们报告了在很宽的温度范围内（从 1.7 到 900 K）的低场和高场电测量结果。室温迁移率范围为 100 至 500 cm(2)·V(-1)·s(-1)，与从剥落石墨烯获得的 GNR 相当，表明在小于 CVD 石墨烯晶粒尺寸的器件中，体缺陷或晶界的作用不大。在高场下，峰值电流密度受到焦耳加热的限制，但少量的热工程使我们能够达到约 2×10(9) A/cm(2)，这是报道的纳米级 CVD 石墨烯互连的最高值。在温度低于约 5 K 时，短 GNR 表现为与它们的长度相当的量子点，突出了金属接触在限制输运中的作用。我们的研究说明了 CVD 生长的 GNR 的机会，同时揭示了变异性和接触仍然是未来的挑战。
