Department of Manufacturing Engineering and Engineering Management, City University of Hong Kong, Hong Kong.
Nanotechnology. 2010 Jun 11;21(23):235602. doi: 10.1088/0957-4484/21/23/235602. Epub 2010 May 13.
This paper presents the synthesis of CuO nanowires using a localized thermal heating method in ambient air. It employs local heat sources defined in micro-resistive heaters fabricated by a standard polysilicon-based surface micromachining process instead of a global furnace heating. Since the synthesis is performed globally at room temperature, the presented process is compatible with standard CMOS. The synthesized CuO nanowires are characterized by scanning electron microscopy, transmission electron microscopy and high resolution transmission electron microscopy. It is found that this approach provides a simple method to locally synthesize suspended CuO nanowires on polysilicon microbridges on silicon substrates, thus allowing for integration of CuO nanowires into silicon-based devices. It provides a significant step towards the process integration of CuO nanowires with MEMS to realize functional devices.
本文提出了一种在环境空气中使用局部热加热方法合成 CuO 纳米线的方法。它采用了通过标准的多晶硅基表面微加工工艺制造的微电阻加热器中定义的局部热源，而不是使用全局炉加热。由于合成是在室温下全局进行的，因此所提出的工艺与标准 CMOS 兼容。通过扫描电子显微镜、透射电子显微镜和高分辨率透射电子显微镜对合成的 CuO 纳米线进行了表征。结果表明，这种方法提供了一种简单的方法，可以在硅衬底上的多晶硅微桥上局部合成悬空的 CuO 纳米线，从而可以将 CuO 纳米线集成到基于硅的器件中。这朝着与 MEMS 集成的 CuO 纳米线的工艺集成迈出了重要的一步，以实现功能性器件。
