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少层石墨烯的电子结构:堆积序列强烈依赖的实验论证。

Electronic structure of few-layer graphene: experimental demonstration of strong dependence on stacking sequence.

机构信息

Department of Physics, Columbia University, 538 West 120th Street, New York, New York 10027, USA.

出版信息

Phys Rev Lett. 2010 Apr 30;104(17):176404. doi: 10.1103/PhysRevLett.104.176404. Epub 2010 Apr 29.

Abstract

The electronic structure of few-layer graphene (FLG) samples with crystalline order was investigated experimentally by infrared absorption spectroscopy for photon energies ranging from 0.2-1 eV. Distinct optical conductivity spectra were observed for different samples having precisely the same number of layers. The different spectra arise from the existence of two stable polytypes of FLG, namely, Bernal (AB) stacking and rhombohedral (ABC) stacking. The observed absorption features, reflecting the underlying symmetry of the two polytypes and the nature of the associated van Hone singularities, were reproduced by explicit calculations within a tight-binding model. The findings demonstrate the pronounced effect of stacking order on the electronic structure of FLG.

摘要

采用红外吸收光谱法,对具有晶体有序的少层石墨烯 (FLG) 样品的电子结构进行了实验研究,光子能量范围为 0.2-1 eV。对于具有完全相同层数的不同样品,观察到了明显不同的光学电导率谱。不同的光谱是由两种稳定的 FLG 多型体,即 Bernal(AB)堆叠和 rhombohedral(ABC)堆叠的存在引起的。通过紧束缚模型中的显式计算,再现了观察到的吸收特征,反映了两种多型体的基本对称性以及相关范霍恩奇点的性质。这些发现表明了堆叠顺序对 FLG 电子结构的显著影响。

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