Department of Chemistry, Rice University, 6100 Main Street, Houston, Texas 77005, USA.
ACS Nano. 2012 Nov 27;6(11):9790-6. doi: 10.1021/nn303328e. Epub 2012 Nov 7.
Few-layer graphene, with Bernal stacking order, is of particular interest to the graphene community because of its unique tunable electronic structure. A synthetic method to produce such large area graphene films with precise thickness from 2 to 4 layers would be ideal for chemists and physicists to explore the promising electronic applications of these materials. Here, large-area uniform Bernal-stacked bi-, tri-, and tetralayer graphene films were successfully synthesized on a Cu surface in selective growth windows, with a finely tuned total pressure and CH(4)/H(2) gas ratio. On the basis of the analyses obtained, the growth mechanism is not an independent homoexpitaxial layer-by-layer growth, but most likely a simultaneous-seeding and self-limiting process.
少层石墨烯具有柏纳尔堆叠顺序，由于其独特的可调谐电子结构，引起了石墨烯界的特别关注。一种能够从 2 到 4 层精确控制厚度的合成方法，将为化学家与物理学家探索这些材料在有前途的电子应用方面提供理想的条件。在此，在精细调控的总压力和 CH(4)/H(2)气体比例下，大面积均匀的双层、三层和四层石墨烯膜在 Cu 表面上成功地在选择的生长窗口中合成。基于所得到的分析，生长机制不是独立的同质外延逐层生长，而是很可能是同时成核和自限制过程。
