Université de Picardie, CHU d'Amiens, Amiens, France.
Neurophysiol Clin. 2010 Jun;40(3):137-49. doi: 10.1016/j.neucli.2010.03.001. Epub 2010 Apr 23.
Recent studies described several changes of attention-related components of late frontal event-related potentials (ERPs) during Go/NoGo paradigm in children with attention-deficit/hyperactivity disorder (ADHD). We aimed to determine whether ERP components corresponding to earlier encoding of visual incoming information are also modulated by attentional disorders.
We recorded high-resolution EEG in 15 children meeting DSM-IV criteria for ADHD, comprising 15 age-matched control groups during an equiprobable Go/NoGo task in a cued continuous performance test (CPT-AX) paradigm. Both P100 and N200 ERP components were measured in response to both Go and NoGo stimuli. We analyzed both components with SwLORETA in order to localize their brain sources.
A low rate of Go correct response and high rate of omission errors were observed in ADHD children. When compared to controls, these displayed delayed P100 and N200 latency, and lower P100-NoGo amplitude. In addition, the P100 latency was delayed for NoGo compared to Go condition. The source of P100 was located in occipital area. A sizable decrease in early electrical activity was found in ADHD, especially in the NoGo condition.
Our results suggest an early deficit in visual sensory integration within the occipital cortex in children with ADHD.
最近的研究描述了注意缺陷多动障碍(ADHD)儿童在 Go/NoGo 范式中与注意力相关的晚期额部事件相关电位(ERP)的几个变化。我们旨在确定对应于视觉传入信息早期编码的 ERP 成分是否也受到注意力障碍的调节。
我们在 cue 连续性能测试(CPT-AX)范式中,对 15 名符合 DSM-IV 标准的 ADHD 儿童和 15 名年龄匹配的对照组进行了高分辨率 EEG 记录,在等概率的 Go/NoGo 任务中。对 Go 和 NoGo 刺激均测量 P100 和 N200 ERP 成分。我们使用 SwLORETA 分析这两个成分,以定位它们的大脑来源。
ADHD 儿童的 Go 正确反应率低,遗漏错误率高。与对照组相比,这些儿童的 P100 和 N200 潜伏期延迟,P100-NoGo 振幅降低。此外,与 Go 条件相比,NoGo 的 P100 潜伏期延迟。P100 的源位于枕叶区。在 ADHD 中发现早期电活动明显减少,尤其是在 NoGo 条件下。
我们的结果表明,ADHD 儿童的枕叶皮层中存在视觉感觉整合的早期缺陷。