Modelling and observations of electron beam charging of an insulator/metal bilayer and its impact on secondary electron images in defect inspection equipment.

A self-consistent simulation of secondary electron (SE) emission and charging of a SiO(2) layer with the thickness of several tens of nanometres on Si is incorporated into a trajectory simulation of emitted SEs above the surface, the centre area of which is charged by electron beams (EBs) at the energy range from 300 to 2000 eV. In order to study the influence of the charging of an insulating layer on defect inspection, a pseudo-image is reconstructed from net SE yields calculated at each point of the SiO(2) surface locally applied the positive voltage. The image contrast between charged and uncharged areas is compared with the observation of thermally oxidized layer with the thickness of 24-106 nm on a Si wafer. The image contrast is very sensitive to the thickness of the SiO(2) layer, which is verified by both observed and calculated images. The calculated changes of the images with the layer thickness and the primary electron energy reproduce the experimental observations fairly well. This confirms a highly sensitive detection mechanism for tiny defects in insulating patterns on a metal hard mask for an EB defect inspection equipment.