Sablon K A, Wang Zh M, Salamo G J, Zhou Lin, Smith David J
Nanoscale Res Lett. 2008 Dec;3(12):530-3. doi: 10.1007/s11671-008-9194-5. Epub 2008 Nov 4.
Nanohole formation on an AlAs/GaAs superlattice gives insight to both the "drilling" effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets "drill" through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01-1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures.
在AlAs/GaAs超晶格上形成纳米孔，有助于深入了解Ga液滴相对于GaAs在AlAs上的“钻孔”效应以及孔填充过程。通过横截面透射电子显微镜研究了在GaAs(100)衬底上形成的纳米孔的形状和深度。由于活化能的差异，Ga液滴穿过AlAs层的速度比穿过GaAs的速度慢得多。纳米孔的重新填充导致沿[01-1]方向形成拉长的GaAs丘。由于毛细作用诱导的扩散，GaAs倾向于在纳米孔内生长，这为制造GaAs和AlAs纳米结构提供了可能性。
