Instituto de Microelectrónica de Madrid (IMM-CNM, CSIC), Isaac Newton, 8 Tres Cantos, Madrid, 28760 Spain.
Nanoscale Res Lett. 2009 May 9;4(8):873-7. doi: 10.1007/s11671-009-9329-3.
In this work, we study the top surface localization of InAs quantum dots once capped by a GaAs layer grown by molecular beam epitaxy. At the used growth conditions, the underneath nanostructures are revealed at the top surface as mounding features that match their density with independence of the cap layer thickness explored (from 25 to 100 nm). The correspondence between these mounds and the buried nanostructures is confirmed by posterior selective strain-driven formation of new nanostructures on top of them, when the distance between the buried and the superficial nanostructures is short enough (d = 25 nm).
在这项工作中，我们研究了通过分子束外延生长的 GaAs 层覆盖后的 InAs 量子点的顶表面定位。在所使用的生长条件下，在顶表面上，下面的纳米结构以隆起的特征显示出来，其密度与所探索的帽层厚度无关（从 25 到 100nm）。这些隆起与埋置纳米结构之间的对应关系通过在后面对它们进行选择性应变驱动形成新的纳米结构来证实，当埋置和表面纳米结构之间的距离足够短（d=25nm）时。
