二硫化锡（SnS₂）纳米线的合成与表征

Lin Ya-Ting, Shi Jen-Bin, Chen Yu-Cheng, Chen Chih-Jung, Wu Po-Feng

Nanoscale Res Lett. 2009 Apr 5;4(7):694-698. doi: 10.1007/s11671-009-9299-5.

The ordered tin disulfide (SnS(2)) nanowire arrays were first fabricated by sulfurizing the Sn nanowires, which are embedded in the nanochannels of anodic aluminum oxide (AAO) template. SnS(2) nanowire arrays are highly ordered and highly dense. X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrate the SnS(2) nanowire is hexagonal polycrystalline. The study of UV/Visible/NIR absorption shows the SnS(2) nanowire is a wide-band semiconductor with three band gap energies (3.3, 4.4, and 5.8 eV).

通过硫化嵌入阳极氧化铝（AAO）模板纳米通道中的锡纳米线，首次制备出有序的二硫化锡（SnS₂）纳米线阵列。SnS₂纳米线阵列高度有序且密度很高。X射线衍射（XRD）和相应的选区电子衍射（SAED）图谱表明SnS₂纳米线为六方多晶。紫外/可见/近红外吸收研究表明SnS₂纳米线是具有三个带隙能量（3.3、4.4和5.8电子伏特）的宽带半导体。