Hu Weiguang, Hien Truong Thi, Kim Dojin, Chang Hyo Sik
Graduate School of Energy Science and Technology, Chungnam National University, Daejeon 305-764, Korea.
Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764, Korea.
Nanomaterials (Basel). 2019 Jul 28;9(8):1083. doi: 10.3390/nano9081083.
Two-dimensional (2D) nanomaterials have distinct optical and electrical properties owing to their unique structures. In this study, smooth 2D amorphous tin disulfide (SnS) films were fabricated by atomic layer deposition (ALD), and applied for the first time to photoelectrochemical water splitting. The optimal stable photocurrent density of the 50-nm-thick amorphous SnS film fabricated at 140 °C was 51.5 µA/cm at an oxygen evolution reaction (0.8 V vs. saturated calomel electrode (SCE)). This value is better than those of most polycrystalline SnS films reported in recent years. These results are attributed mainly to adjustable optical band gap in the range of 2.80 to 2.52 eV, precise control of the film thickness at the nanoscale, and the close contact between the prepared SnS film and substrate. Subsequently, the photoelectron separation mechanisms of the amorphous, monocrystalline, and polycrystalline SnS films are discussed. Considering above advantages, the ALD amorphous SnS film can be designed and fabricated according to the application requirements.
二维（2D）纳米材料因其独特的结构而具有独特的光学和电学性质。在本研究中，通过原子层沉积（ALD）制备了光滑的二维非晶态二硫化锡（SnS）薄膜，并首次将其应用于光电化学水分解。在140°C下制备的50纳米厚非晶态SnS薄膜在析氧反应（相对于饱和甘汞电极（SCE）为0.8V）时的最佳稳定光电流密度为51.5μA/cm²。该值优于近年来报道的大多数多晶SnS薄膜。这些结果主要归因于2.80至2.52eV范围内可调节的光学带隙、纳米级薄膜厚度的精确控制以及制备的SnS薄膜与基底之间的紧密接触。随后，讨论了非晶态、单晶态和多晶态SnS薄膜的光电子分离机制。考虑到上述优点，可根据应用需求设计和制备ALD非晶态SnS薄膜。
