单晶SnS纳米线阵列的表征及光学性质

Characterization and Optical Properties of the Single Crystalline SnS Nanowire Arrays.

作者信息

Yue G H, Wang L S, Wang X, Chen Y Z, Peng D L

机构信息

Department of Materials Science and Engineering, Research Center of Materials Design and Applications, Xiamen University, Xiamen, 361005 People's Republic of China.

出版信息

Nanoscale Res Lett. 2009 Jan 23;4(4):359-363. doi: 10.1007/s11671-009-9253-6.

DOI:10.1007/s11671-009-9253-6

PMID:20596376

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC2894107/

Abstract

The SnS nanowire arrays have been successfully synthesized by the template-assisted pulsed electrochemical deposition in the porous anodized aluminum oxide template. The investigation results showed that the as-synthesized nanowires are single crystalline structures and they have a highly preferential orientation. The ordered SnS nanowire arrays are uniform with a diameter of 50 nm and a length up to several tens of micrometers. The synthesized SnS nanowires exhibit strong absorption in visible and near-infrared spectral region and the direct energy gap E(g) of SnS nanowires is 1.59 eV.

摘要

通过模板辅助脉冲电化学沉积法，在多孔阳极氧化铝模板中成功合成了硫化锡纳米线阵列。研究结果表明，合成的纳米线为单晶结构，且具有高度择优取向。有序的硫化锡纳米线阵列直径为50纳米，长度可达几十微米，十分均匀。合成的硫化锡纳米线在可见光和近红外光谱区域表现出强烈吸收，其直接能隙E(g)为1.59电子伏特。