Takino Hideo, Yamamura Kazuya, Sano Yasuhisa, Mori Yuzo
Nikon Corporation, 1-10-1 Asamizodai, Sagamihara, Kanagawa 228-0828, Japan.
Appl Opt. 2010 Aug 10;49(23):4434-40. doi: 10.1364/AO.49.004434.
Plasma chemical vaporization machining (CVM) is a high-precision chemical shaping method using rf plasma generated in the proximity of an electrode in an atmospheric environment. The purpose of the present study is to clarify the removal characteristics of plasma CVM using a pipe electrode. Polished fused silica plates were processed by plasma CVM, polishing, and precision grinding under various conditions. The removal rate of plasma CVM was about 4 to 1100 times faster than that of polishing, and the maximum removal rate was almost equal to that of precision grinding. The roughness of the resultant surfaces was almost the same as that of the polished surfaces.
等离子体化学气相蒸发加工（CVM）是一种在大气环境中，利用电极附近产生的射频等离子体进行的高精度化学成型方法。本研究的目的是阐明使用管式电极的等离子体CVM的去除特性。在各种条件下，通过等离子体CVM、抛光和精密磨削对抛光的熔融石英板进行加工。等离子体CVM的去除速率比抛光快约4至1100倍，最大去除速率几乎与精密磨削相同。所得表面的粗糙度与抛光表面几乎相同。
