Ashery A, Gaballah A E H, Elnasharty Mohamed M M, Basyooni-M Kabatas Mohamed A
Solid State Physics Department, Physics Research Institute, National Research Centre, 33 El-Bohouth St, Dokki, Giza 12622, Egypt.
Photometry and Radiometry Division, National Institutes of Standards (NIS), Tersa St, Al-Haram, Giza 12211, Egypt.
iScience. 2024 Aug 3;27(9):110636. doi: 10.1016/j.isci.2024.110636. eCollection 2024 Sep 20.
The current work presents the possibility of tuning the dielectric parameters by changing the temperature, voltage, and frequency. The unusual behavior of some parameters was attributed to the lattice mismatch constant between gallium arsenide (GaAs) and silicon (Si) and the crystal defects between them. In this article, a thin GaAs film has been grown on Si substrates by liquid phase epitaxial (LPE) as n-GaAs/p-Si heterostructure. Despite the lattice mismatch between GaAs and Si, our interest in this article was focused on investigating the electrical and dielectric properties by I-V and C-V measurements. This was distinguished in the behavior of the dielectric properties such as the imaginary part of modules M″, the real and imaginary part of electrical conductivity ac and ac, respectively, which has not been seen before at high frequencies.
当前的工作展示了通过改变温度、电压和频率来调节介电参数的可能性。一些参数的异常行为归因于砷化镓（GaAs）和硅（Si）之间的晶格失配常数以及它们之间的晶体缺陷。在本文中，通过液相外延（LPE）在Si衬底上生长了一层薄的GaAs薄膜，形成n-GaAs/p-Si异质结构。尽管GaAs和Si之间存在晶格失配，但本文我们感兴趣的是通过I-V和C-V测量来研究其电学和介电性能。这在介电性能的行为中表现得很明显，例如模量M″的虚部、电导率σac和σac的实部和虚部，这些在高频下以前从未见过。
