Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, 02139, USA.
Adv Mater. 2010 Oct 1;22(37):4162-6. doi: 10.1002/adma.201000268.
The in situ crystallization of the incorporated amorphous semiconductor within the multimaterial fiber device yields a large decrease in defect density and a concomitant five-order-of-magnitude decrease in resistivity of the novel metal-insulator-crystalline semiconductor structure. Using a post-drawing crystallization process, the first tens-of-meters-long single-fiber field-effect device is demonstrated. This work opens significant opportunities for incorporating higher functionality in functional fibers and fabrics.
多材料纤维器件中掺入的非晶半导体的原位结晶导致缺陷密度大幅降低，新型金属-绝缘体-半导体晶体结构的电阻率相应地降低了五个数量级。采用后拉伸结晶工艺，首次展示了数十米长的单纤维场效应器件。这项工作为在功能纤维和织物中融入更高的功能提供了重要机会。
