Measurement of local Si-nanowire growth kinetics using in situ transmission electron microscopy of heated cantilevers.

A technique to study nanowire growth processes on locally heated microcantilevers in situ in a transmission electron microscope has been developed. The in situ observations allow the characterization of the nucleation process of silicon wires, as well as the measurement of growth rates of individual nanowires and the ability to observe the formation of nanowire bridges between separate cantilevers to form a complete nanowire device. How well the nanowires can be nucleated controllably on typical cantilever sidewalls is examined, and the measurements of nanowire growth rates are used to calibrate the cantilever-heater parameters used in finite-element models of cantilever heating profiles, useful for optimization of the design of devices requiring local growth.