Department of Nano- and Microtechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark.
Small. 2010 Sep 20;6(18):2058-64. doi: 10.1002/smll.200902187.
A technique to study nanowire growth processes on locally heated microcantilevers in situ in a transmission electron microscope has been developed. The in situ observations allow the characterization of the nucleation process of silicon wires, as well as the measurement of growth rates of individual nanowires and the ability to observe the formation of nanowire bridges between separate cantilevers to form a complete nanowire device. How well the nanowires can be nucleated controllably on typical cantilever sidewalls is examined, and the measurements of nanowire growth rates are used to calibrate the cantilever-heater parameters used in finite-element models of cantilever heating profiles, useful for optimization of the design of devices requiring local growth.
已经开发出一种在透射电子显微镜中对局部加热微悬臂梁上的纳米线生长过程进行原位研究的技术。原位观察允许对硅线的成核过程进行表征，以及对单个纳米线的生长速率进行测量，并能够观察到在单独的悬臂梁之间形成纳米线桥以形成完整的纳米线器件的过程。研究了在典型的悬臂侧壁上可控地成核纳米线的效果，并且纳米线生长速率的测量结果用于校准用于悬臂加热曲线有限元模型的悬臂-加热器参数，这对于需要局部生长的器件设计的优化很有用。
