School of Electrical Engineering, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69978, Israel.
ACS Appl Mater Interfaces. 2010 Aug;2(8):2289-92. doi: 10.1021/am1003415.
Nonideal polar monolayers can induce a field-effect in molecular gated transistors. To quantify the magnitude of this phenomenon, we have calculated the effect of roughness and noncontinuity of such layers on the operation of hybrid silicon-on-insulator field-effect transistors. The results show that under most practical conditions, the nonideality of polar monolayers induces very small electric fields in the underlying transistor channel, and consequently a negligible gating effect.
非理想的极性单层可以在分子门控晶体管中诱导电场效应。为了量化这种现象的幅度，我们计算了这种层的粗糙度和不连续性对混合绝缘体上硅场效应晶体管工作的影响。结果表明，在大多数实际条件下，极性单层的非理想性在底层晶体管通道中诱导非常小的电场，因此门控效应可以忽略不计。
