Department of Materials Science and Engineering, Seoul National University, Seoul, Korea.
Nanotechnology. 2010 Sep 24;21(38):385202. doi: 10.1088/0957-4484/21/38/385202. Epub 2010 Aug 26.
Kirchhoff's law was used to examine the electrical specifications of selection diodes, which are essential for suppressing the read interference problems in nano-scale resistive switching cross bar arrays with a high block density. The diode in the cross bar array with a 100 Mb block density should have a reverse/forward resistance ratio of > 10(8), and a forward current density of > 10(5) A cm(-2) for stable reading and writing operation. Whilst normal circuit simulators are heavily overloaded when the number of cells (m) connected to one bit and word line is larger (m >> 100), which is the desired range for high density cross bar arrays, the present model can provide a simple simulation. The validity of this new method was confirmed by a comparison with the previously reported method based on a voltage estimation.
基尔霍夫定律被用来研究选择二极管的电学特性，这对于抑制具有高阻断密度的纳米级电阻式开关交叉阵列中的读取干扰问题至关重要。在具有 100Mb 块密度的交叉阵列中，二极管的反向/正向电阻比应大于 10(8)，正向电流密度应大于 10(5)Acm(-2)，以实现稳定的读写操作。虽然当连接到一位和字线的单元数量（m）较大（m>>100）时，普通电路模拟器会严重过载，而这正是高密度交叉阵列所需的范围，但本模型可以提供简单的模拟。通过与之前基于电压估计的报告方法进行比较，验证了这种新方法的有效性。
