基于能级偏移和掺杂的用于自整流存储器件的聚合物-碳点混合结构
Polymer-carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping.
作者信息
Lu Hang, Chen Yingying, Chang Qing, Cheng Shuai, Ding Yamei, Chen Jie, Xiu Fei, Wang Xiangjing, Ban Chaoyi, Liu Zhengdong, Liu Juqing, Huang Wei
机构信息
Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 P. R. China
出版信息
RSC Adv. 2018 Apr 16;8(25):13917-13920. doi: 10.1039/c8ra01928b. eCollection 2018 Apr 11.
A strategy for self-rectifying memory diodes based on a polymer-carbon dot hybrid structure, with a configuration of rGO/PEDOT : PSS/carbon dots/MEH-PPV/Al, has been proposed. The fabricated device exhibits a rectification of 10 in the rectification model and an ON/OFF current ratio of 121 in the memory model. The rectifying behavior was attributed to an energy level offset between the electrodes and the bilayer polymers and the memory effect was induced by carrier trapping of carbon dots within the polymers.
一种基于聚合物-碳点混合结构的自整流记忆二极管策略被提出，其结构为rGO/PEDOT : PSS/碳点/MEH-PPV/Al。所制备的器件在整流模型中表现出10的整流比，在记忆模型中开/关电流比为121。整流行为归因于电极与双层聚合物之间的能级偏移，而记忆效应是由聚合物中碳点的载流子俘获引起的。
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