Li Yingtao, Gong Qingchun, Li Rongrong, Jiang Xinyu
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, People's Republic of China. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China.
Nanotechnology. 2014 May 9;25(18):185201. doi: 10.1088/0957-4484/25/18/185201. Epub 2014 Apr 15.
Crossbar arrays are the most promising application of a resistive random access memory (RRAM) device for achieving high density memory. However, cross-talk interference in the crossbar array limits the increase in the integration density. In this paper, the combination of two anti-parallel connected diodes and a bipolar RRAM cell is proposed to suppress the sneak current in a crossbar array with anti-parallel connected diodes as the selector for the bipolar RRAM. By using the anti-parallel connected diodes as a selector, the sneak current can be effectively suppressed and the high density crossbar array of more than 1 Mb can be realized as estimated by the 1/2V read voltage scheme. These results indicate that anti-parallel connected diodes can be used as a bipolar selector and have great potential for high density bipolar RRAM crossbar array applications.
交叉开关阵列是电阻式随机存取存储器（RRAM）器件实现高密度存储最具前景的应用。然而，交叉开关阵列中的串扰干扰限制了集成密度的提高。本文提出将两个反并联二极管与一个双极RRAM单元相结合，以抑制交叉开关阵列中的潜行电流，该交叉开关阵列采用反并联二极管作为双极RRAM的选择器。通过使用反并联二极管作为选择器，可以有效抑制潜行电流，并且根据1/2V读取电压方案估计，可实现超过1 Mb的高密度交叉开关阵列。这些结果表明，反并联二极管可用作双极选择器，在高密度双极RRAM交叉开关阵列应用中具有巨大潜力。
