School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, People's Republic of China.
Nanotechnology. 2010 Sep 24;21(38):385601. doi: 10.1088/0957-4484/21/38/385601. Epub 2010 Aug 26.
Novel SiOC nanocomposites were successfully synthesized from commercial silica sol and sucrose via a simply designed route. The formation of SiOC nanocomposites was studied using thermogravimetry and differential scanning calorimetry. The synthesized nanocomposites were characterized by Fourier transform infrared spectroscopy, x-ray fluorescence spectrometer, x-ray photoelectron spectroscopy, x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The results indicate that the synthesized composites are amorphous in nature and homogeneous with the microstructure of close packed SiO(2) and carbon at nanoscale. The SiOC nanocomposites exhibit very high reactivity and can be annealed to produce SiC nanocrystals at 1200 degrees C which is about 300 degrees C lower than the value obtained by thermodynamic calculation. Ultra-large-scale beta-SiC nanowires with high quality were prepared by directly annealing the synthesized SiOC nanocomposites at 1500 degrees C under Ar atmosphere, where the yield of SiC nanowires was up to 59%. The SiC nanowires grow along the [111] direction with highly uniform diameters of about 100 nm. Experimental results indicate that the close contact between SiO(2) and carbon at nanoscale plays a vital role in the high yield of SiC nanowires. The present work provides an efficient strategy for the large scale production of high-quality SiC nanowires.
通过简单设计的路线,成功地从商业硅溶胶和蔗糖中合成了新型 SiOC 纳米复合材料。使用热重分析和差示扫描量热法研究了 SiOC 纳米复合材料的形成。通过傅里叶变换红外光谱、X 射线荧光光谱、X 射线光电子能谱、X 射线衍射、扫描电子显微镜和透射电子显微镜对合成的纳米复合材料进行了表征。结果表明,合成的复合材料为非晶态,具有纳米级 SiO2 和碳的紧密堆积的微观结构,且均匀一致。SiOC 纳米复合材料具有非常高的反应活性,可在 1200°C 下退火生成 SiC 纳米晶,比热力学计算得到的温度低约 300°C。通过直接在 Ar 气氛下于 1500°C 退火合成的 SiOC 纳米复合材料,制备出了高质量的超大尺寸 β-SiC 纳米线,纳米线的产率高达 59%。SiC 纳米线沿[111]方向生长,直径非常均匀,约为 100nm。实验结果表明,纳米尺度上 SiO2 和碳的紧密接触对 SiC 纳米线的高产率起着至关重要的作用。本工作为大规模制备高质量 SiC 纳米线提供了一种有效的策略。