Seryogin George, Shalish Ilan, Moberlychan Warren, Narayanamurti Venkatesh
Harvard University, Cambridge, MA 02138, USA.
Nanotechnology. 2005 Oct;16(10):2342-5. doi: 10.1088/0957-4484/16/10/058. Epub 2005 Aug 26.
Catalytic growth of GaN nanowires by hydride vapour phase epitaxy is demonstrated. Nickel-gold was used as a catalyst. Nanowire growth was limited to areas patterned with catalyst. Characterization of the nanowires with transmission electron microscopy, x-ray diffraction, and low temperature photoluminescence shows that the nanowires are stoichiometric 2H-GaN single crystals growing in the [0001] orientation when grown on sapphire, with occasional stacking faults along the c-axis as the only defect type observed in most of the wires. A red shift observed in the photoluminescence was too large to be explained by the minor strain observed alone, and was only marginally affected by temperature, suggesting a superposition of several factors.
展示了通过氢化物气相外延法催化生长氮化镓纳米线。使用镍金作为催化剂。纳米线的生长局限于用催化剂图案化的区域。用透射电子显微镜、X射线衍射和低温光致发光对纳米线进行表征表明，当在蓝宝石上生长时，纳米线是化学计量比的2H-GaN单晶，沿[0001]取向生长，在大多数纳米线中观察到的唯一缺陷类型是沿c轴偶尔出现的堆垛层错。在光致发光中观察到的红移太大，无法仅用单独观察到的微小应变来解释，并且仅受温度的轻微影响，这表明有多种因素叠加。
