Zhang Cai, Liu Xiaoyuan, Li Jing, Zhang Xinglai, Yang Wenjing, Jin Xin, Liu Fei, Yao Jinlei, Jiang Xin, Liu Baodan
Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
State Key Laboratory of Optoelectronic Materials and Technologies and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China.
Nanoscale. 2020 Feb 20;12(7):4393-4399. doi: 10.1039/c9nr09781c.
The growth of nonpolar GaN nanowires along the [101[combining macron]0] orientation has been demonstrated via a modified hydride vapor phase epitaxy (HVPE) process using GaCl3 and NH3 as precursors. The morphology and structure evolution as a dependence of the growth parameters was thoroughly studied to elucidate the nucleation and crystallization of nonpolar GaN nanowires. It has been found that the V/III ratio and temperature are critically important for the formation of high-quality nonpolar GaN nanowires. The existence of a cubic GaN (c-GaN) transition layer between the Au catalyst and hexagonal GaN (h-GaN) nonpolar nanowires was demonstrated by high-resolution transmission electron microscopy (HRTEM) characterization, which plays an important role in the initial nucleation of nonpolar GaN nanowires and the formation of stacking faults (SFs) in the GaN nanowires grown at lower temperature. Optical investigations show that the defect-related visible emission of nonpolar GaN nanowires is closely related to the growth process and can be selectively tailored. The synthetic strategy using GaCl3 as the Ga precursor to study the vapor phase epitaxy process in this work will provide a simple and efficient approach to obtain nonpolar GaN nanowires and will thus pave a solid way for fundamental research on high-quality nonpolar GaN nanowires in optoelectronic nanodevices.
通过使用GaCl3和NH3作为前驱体的改进氢化物气相外延（HVPE）工艺，已证明非极性GaN纳米线沿[101[组合 Macron]0]取向生长。深入研究了作为生长参数函数的形貌和结构演变，以阐明非极性GaN纳米线的成核和结晶过程。已发现V/III比和温度对于高质量非极性GaN纳米线的形成至关重要。通过高分辨率透射电子显微镜（HRTEM）表征证明了在Au催化剂和六方GaN（h-GaN）非极性纳米线之间存在立方GaN（c-GaN）过渡层，这在非极性GaN纳米线的初始成核以及在较低温度下生长的GaN纳米线中堆垛层错（SFs）的形成中起着重要作用。光学研究表明，非极性GaN纳米线与缺陷相关的可见发射与生长过程密切相关，并且可以进行选择性调整。在这项工作中使用GaCl3作为Ga前驱体来研究气相外延过程的合成策略将提供一种简单有效的方法来获得非极性GaN纳米线，从而为光电子纳米器件中高质量非极性GaN纳米线的基础研究铺平坚实的道路。
