Department of Chemistry and Biochemistry, Florida State University, 95 Chieftain Way, Dittmer Building, Tallahassee, FL 32306, USA.
Anal Bioanal Chem. 2011 Feb;399(4):1473-9. doi: 10.1007/s00216-010-4144-3. Epub 2010 Sep 9.
Laser ablation of glass allows for production of microfluidic devices without the need for hydrofluoric acid and photolithography. The goal of this study was to compare the separation performance of microfluidic devices produced using a low-cost laser ablation system and conventional wet etching. During laser ablation, cracking of the glass substrate was prevented by heating the glass to 300 °C. A range of laser energy densities was found to produce channel depths ranging from 4 to 35 μm and channel widths from 118 to 162 μm. The electroosmotic flow velocity was lower in laser-ablated devices, 0.110±0.005 cm s(-1), as compared to wet-etched microfluidic chips, 0.126±0.003 cm s(-1). Separations of both small and large molecules performed on both wet- and laser-ablated devices were compared by examining limits of detection, theoretical plate count, and peak asymmetry. Laser-induced fluorescence detection limits were 10 pM fluorescein for both types of devices. Laser-ablated and wet-etched microfluidic chips had reproducible migration times with ≤ 2.8% relative standard deviation and peak asymmetries ranged from 1.0 to 1.8. Numbers of theoretical plates were between 2.8- and 6.2-fold higher on the wet-etched devices compared to laser-ablated devices. Nevertheless, resolution between small and large analytes was accomplished, which indicates that laser ablation may find an application in pedagogical studies of electrophoresis or microfluidic devices, or in settings where hydrofluoric acid cannot be used.
激光烧蚀玻璃可用于制造微流控器件,而无需使用氢氟酸和光刻技术。本研究的目的是比较使用低成本激光烧蚀系统和传统湿法刻蚀制造的微流控器件的分离性能。在激光烧蚀过程中,通过将玻璃加热至 300°C 来防止玻璃基底开裂。发现一系列激光能量密度可产生 4 至 35 µm 的通道深度和 118 至 162 µm 的通道宽度。与湿法刻蚀微流控芯片相比,激光烧蚀器件中的电渗流速度较低,为 0.110±0.005 cm s(-1)。在对大小分子的分离中,通过检测检测限、理论板数和峰不对称性,比较了湿法和激光烧蚀器件的性能。两种类型的器件的荧光检测限均为 10 pM 荧光素。激光烧蚀和湿法刻蚀的微流控芯片的迁移时间具有可重复性,相对标准偏差≤2.8%,峰不对称性范围为 1.0 至 1.8。与激光烧蚀器件相比,湿法刻蚀器件的理论板数高 2.8 至 6.2 倍。尽管如此,还是实现了小分子和大分子之间的分辨率,这表明激光烧蚀可能在电泳或微流控器件的教学研究或在无法使用氢氟酸的情况下找到应用。