Suppr超能文献

生长界面的普适涨落:在湍流液晶中的证据。

Universal fluctuations of growing interfaces: evidence in turbulent liquid crystals.

机构信息

Department of Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan.

出版信息

Phys Rev Lett. 2010 Jun 11;104(23):230601. doi: 10.1103/PhysRevLett.104.230601.

Abstract

We investigate growing interfaces of topological-defect turbulence in the electroconvection of nematic liquid crystals. The interfaces exhibit self-affine roughening characterized by both spatial and temporal scaling laws of the Kardar-Parisi-Zhang theory in 1+1 dimensions. Moreover, we reveal that the distribution and the two-point correlation of the interface fluctuations are universal ones governed by the largest eigenvalue of random matrices. This provides quantitative experimental evidence of the universality prescribing detailed information of scale-invariant fluctuations.

摘要

我们研究了向列相液晶的电致对流中拓扑缺陷湍流的生长界面。界面表现出自相似性,具有卡达诺-帕里西-张理论在 1+1 维时空的时空标度律。此外,我们揭示了界面涨落的分布和两点相关是由随机矩阵的最大本征值控制的普适性。这为规定了标度不变涨落详细信息的普适性提供了定量的实验证据。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验