Department of Physics, 104 Davey Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
Phys Rev Lett. 2010 Jun 11;104(23):236601. doi: 10.1103/PhysRevLett.104.236601. Epub 2010 Jun 8.
From a combination of careful and detailed theoretical and experimental studies, we demonstrate that the Boltzmann theory including all scattering mechanisms gives an excellent account, with no adjustable parameters, of high electric field transport in single as well as double-oxide graphene transistors. We further show unambiguously that scattering from the substrate and superstrate surface optical phonons governs the high-field transport and heat dissipation over a wide range of experimentally relevant parameters. Models that neglect surface optical phonons altogether or treat them in a simple phenomenological manner are inadequate. We outline possible strategies for achieving higher current and complete saturation in graphene devices.
通过仔细和详细的理论和实验研究的结合，我们证明了包括所有散射机制的玻尔兹曼理论可以在没有可调参数的情况下，极好地描述单双层氧化石墨烯晶体管中的高电场输运。我们进一步明确表明，来自衬底和上覆层表面光学声子的散射控制着在广泛的实验相关参数范围内的高场输运和热耗散。完全忽略表面光学声子或简单地用唯象方法处理它们的模型是不充分的。我们概述了在石墨烯器件中实现更高电流和完全饱和的可能策略。
