Materials Research Center, Northwestern University, Evanston, Illinois, USA.
Phys Rev Lett. 2010 Sep 10;105(11):117202. doi: 10.1103/PhysRevLett.105.117202. Epub 2010 Sep 9.
We have demonstrated the first bipolar magnetic junction transistor using a dilute magnetic semiconductor. For an InMnAs p-n-p transistor magnetoamplification is observed at room temperature. The observed magnetoamplification is attributed to the magnetoresistance of the magnetic semiconductor InMnAs heterojunction. The magnetic field dependence of the transistor characteristics confirm that the magnetoamplification results from the junction magnetoresistance. To describe the experimentally observed transistor characteristics, we propose a modified Ebers-Moll model that includes a series magnetoresistance attributed to spin-selective conduction. The capability of magnetic field control of the amplification in an all-semiconductor transistor at room temperature potentially enables the creation of new computer logic architecture where the spin of the carriers is utilized.
我们已经展示了使用稀磁半导体的第一个双极磁结晶体管。对于 InMnAs p-n-p 晶体管，在室温下观察到了磁放大。观察到的磁放大归因于磁性半导体 InMnAs 异质结的磁电阻。晶体管特性的磁场依赖性证实，磁放大是由结磁电阻引起的。为了描述实验观察到的晶体管特性，我们提出了一个改进的 Ebers-Moll 模型，其中包括归因于自旋选择传导的串联磁电阻。在室温下，全半导体晶体管中能够控制放大的磁场，这有可能实现新的计算机逻辑架构，其中利用了载流子的自旋。
