Department of Physics and Astronomy, University of California-Los Angeles, Los Angeles, California 90024, USA.
Phys Rev Lett. 2010 Aug 13;105(7):075001. doi: 10.1103/PhysRevLett.105.075001. Epub 2010 Aug 9.
The time-dependent argon-ion velocity distribution function above and within the plasma sheath of an rf-biased substrate has been measured using laser-induced fluorescence in a commercial plasma processing tool. Discharge parameters were such that the 2.2 MHz rf-bias period was on the order of the ion transit time through the sheath (τ{ion}/τ{rf}=0.3). This work embodies the first time-resolved measurement of ion velocity distribution functions within an rf-biased sheath over a large area (30 cm diameter) silicon wafer substrate.
使用激光诱导荧光在商业等离子体处理工具中测量了射频偏置基底的等离子体鞘层内外随时间变化的氩离子速度分布函数。放电参数使得 2.2 MHz 的射频偏置周期与离子穿过鞘层的时间（τ{ion}/τ{rf}=0.3）相当。这项工作首次在大面积（30 厘米直径）硅片基底上实现了射频偏置鞘层内离子速度分布函数的时间分辨测量。
