Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA.
Science. 2010 Oct 8;330(6001):214-9. doi: 10.1126/science.1193369.
Epitaxy is a widely used method to grow high-quality crystals. One of the key challenges in the field of inorganic solids is the development of epitaxial single-crystal nanostructures. We describe their formation from block copolymer self-assembly-directed nanoporous templates on single-crystal Si backfilled with Si or NiSi through a laser-induced transient melt process. Depending on thickness, template removal leaves either an array of nanopillars or porous nanostructures behind. For stoichiometric NiSi deposition, the template pores provide confinement, enabling heteroepitaxial growth. Irradiation through a mask provides access to hierarchically structured materials. These results on etchable and non-etchable materials suggest a general strategy for growing epitaxial single-crystal nanostructured thin films for fundamental studies and a wide variety of applications, including energy conversion and storage.
外延法是一种广泛用于生长高质量晶体的方法。在无机固体领域,其中一个关键挑战是开发外延单晶纳米结构。我们描述了它们在通过激光诱导瞬态熔融过程用 Si 或 NiSi 填充的单晶 Si 上,由嵌段共聚物自组装导向的纳米多孔模板形成的过程。根据厚度的不同,模板去除后会留下纳米柱阵列或多孔纳米结构。对于化学计量比的 NiSi 沉积,模板孔提供了限制,从而实现了异质外延生长。通过掩模进行辐照可获得具有层次结构的材料。这些关于可蚀刻和不可蚀刻材料的结果表明,对于基础研究和各种应用,包括能量转换和存储,生长外延单晶纳米结构薄膜存在一种通用策略。