Azzam R M
Appl Opt. 1994 Sep 1;33(25):6009-11. doi: 10.1364/AO.33.006009.
The modulated reflected and nonreflected light fluxes, measured as the azimuth of incident linearly polarized light is varied, yield the absolute reflectances R(p), and R(s), of a dielectric or semiconductor surface. Application to a reflective Si detector determines the refractive index and thickness of a SiO(2) film on the detector surface.
当入射线性偏振光的方位角变化时，测量调制后的反射光通量和非反射光通量，可得出电介质或半导体表面的绝对反射率R(p)和R(s)。将其应用于反射型硅探测器，可确定探测器表面SiO(2)薄膜的折射率和厚度。
