Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095, United States.
Nano Lett. 2010 Nov 10;10(11):4590-4. doi: 10.1021/nl1025979. Epub 2010 Oct 12.
Conductance fluctuation is usually unavoidable in graphene nanoribbons (GNR) due to the presence of disorder along its edges. By measuring the low-frequency noise in GNR devices, we find that the conductance fluctuation is strongly correlated with the density-of-states of GNR. In single-layer GNR, the gate-dependence of noise shows peaks whose positions quantitatively match the subband positions in the band structures of GNR. This correlation provides a robust mechanism to electrically probe the band structure of GNR, especially when the subband structures are smeared out in conductance measurement.
由于石墨烯纳米带（GNR）边缘存在无序，电导涨落通常是不可避免的。通过测量 GNR 器件中的低频噪声，我们发现电导涨落与 GNR 的态密度强烈相关。在单层 GNR 中，噪声的栅极依赖性表现出峰值，其位置与 GNR 能带结构中的子带位置定量匹配。这种相关性提供了一种稳健的机制来电学探测 GNR 的能带结构，特别是在电导测量中子带结构被模糊时。
