Döring Sven, Richter Sören, Nolte Stefan, Tünnermann Andreas
Institute of Applied Physics, Friedrich-Schiller-University, Jena, Germany.
Opt Express. 2010 Sep 13;18(19):20395-400. doi: 10.1364/OE.18.020395.
For the first time, in situ the hole shape evolution during ultrashort pulse laser drilling in semiconductor material is imaged. The trans-illumination of the sample at a wavelength of 1.06 µm is projected onto a standard CCD camera during the ablation, providing an image of the contour of the ablated structure perpendicular to the irradiation for drilling. This demonstrated technique enables a direct, high resolution investigation of the temporal evolution of the drilling process in the depth of the material without complex sample preparation or post processing.
首次对半导体材料中超短脉冲激光钻孔过程中的孔形状演变进行了原位成像。在烧蚀过程中，将波长为1.06 µm的样品透射光投射到标准电荷耦合器件（CCD）相机上，从而提供垂直于钻孔辐照方向的烧蚀结构轮廓图像。这种已证实的技术能够在无需复杂样品制备或后处理的情况下，对材料深度处钻孔过程的时间演变进行直接、高分辨率的研究。
