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三元 Zn2SnO4 纳米线的合成、表征及光电性能。

Synthesis, characterization and opto-electrical properties of ternary Zn2SnO4 nanowires.

机构信息

Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore.

出版信息

Nanotechnology. 2010 Nov 19;21(46):465706. doi: 10.1088/0957-4484/21/46/465706. Epub 2010 Oct 26.

DOI:10.1088/0957-4484/21/46/465706
PMID:20975210
Abstract

Ternary oxides have the potential to display better electrical and optical properties than the commonly fabricated binary oxides. In our experiments, Zn(2)SnO(4) (ZTO) nanowires were synthesized via thermal evaporation and vapor phase transport. The opto-electrical performance of the nanowires was investigated. An individual ZTO nanowire field-effect transistor was successfully fabricated for the first time and shows an on-off ratio of 10(4) and transconductance of 20.6 nS, which demonstrates the promising electronic performance of ZTO nanowire in an electrical device. Field emission experiments on ZTO nanowire film also indicate their potential application as a field emission electron source.

摘要

三元氧化物有可能比常用的二元氧化物表现出更好的电学和光学性能。在我们的实验中,通过热蒸发和气相输运合成了 Zn(2)SnO(4) (ZTO)纳米线。研究了纳米线的光电性能。首次成功地制备了单个 ZTO 纳米线场效应晶体管,其开关比为 10(4),跨导为 20.6 nS,这表明 ZTO 纳米线在电子器件中具有有前途的电子性能。ZTO 纳米线薄膜的场发射实验也表明它们有可能用作场发射电子源。

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