College of Nanoscale Science and Engineering (CNSE), State University at Albany, Albany, NY 12203, USA.
Nanotechnology. 2010 Nov 26;21(47):475206. doi: 10.1088/0957-4484/21/47/475206. Epub 2010 Oct 29.
The resistive switching properties of Cu-doped-HfO(2)-based resistive-random-access-memory (ReRAM) devices are investigated under proton-based irradiations with different high-range total doses of 1.5, 3 and 5 Giga-rad[Si]. The measurement results obtained immediately after irradiation demonstrate that the proton-based total dose will introduce significant variations in the operation voltages and resistance values. These effects are enhanced almost linearly when the dose increases from 1.5 to 5 Giga-rad[Si]. Furthermore, five days after irradiation, the electrical properties of the device rebound, resulting in reduced operation voltages and resistance values. This is consistent with the time-dependent super-recovery behavior observed previously in CMOS gate oxide. These results can be explained by the proton irradiation effect on the electron/hole trap density inside HfO(2) and its impact on ReRAM device metallic filament formation-and-rupture, which is based on electrolyte theory.
铜掺杂氧化铪（Cu-doped-HfO(2)）基阻变随机存取存储器（ReRAM）器件在不同高剂量范围的质子辐照下的电阻开关特性进行了研究，总剂量分别为 1.5、3 和 5 吉拉德[Si]。辐照后立即进行的测量结果表明，质子总剂量会显著改变器件的工作电压和电阻值。当剂量从 1.5 增加到 5 吉拉德[Si]时，这种影响几乎呈线性增强。此外，辐照 5 天后，器件的电性能发生反弹，导致工作电压和电阻值降低。这与之前在 CMOS 栅氧化层中观察到的时变超恢复行为一致。这些结果可以用质子辐照对 HfO(2) 内部电子/空穴俘获密度的影响以及对 ReRAM 器件金属丝形成和断裂的影响来解释，这是基于电解质理论的。
