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基于单根碳纳米管晶体管和薄膜碳电阻器的单端序电路。

Unipolar sequential circuits based on individual-carbon-nanotube transistors and thin-film carbon resistors.

机构信息

Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany.

出版信息

ACS Nano. 2011 Sep 27;5(9):7525-31. doi: 10.1021/nn202486v. Epub 2011 Aug 26.

Abstract

A fabrication process for the monolithic integration of field-effect transistors based on individual carbon nanotubes and load resistors based on vacuum-evaporated carbon films into fast unipolar logic circuits on glass substrates is reported for the first time. The individual-carbon-nanotube transistors operate with relatively small gate-source and drain-source voltages of 1 V and combine large transconductance (up to 6 μS), large ON/OFF ratio (>10(4)), and short switching delay time constants (12 ns). The thin-film carbon load resistors provide linear current-voltage characteristics and resistances between 300 kΩ and 100 MΩ, depending on the layout of the resistors and the thickness of the vacuum-evaporated carbon films. Various combinational circuits (NAND, NOR, AND, OR gates) as well as a sequential circuit ( ̅S ̅R NAND latch) have been fabricated and characterized. Although these unipolar circuits cannot compete with optimized complementary circuits in terms of integration density and static power consumption, they offer the possibility of realizing air-stable, low-voltage integrated circuits with promising static and dynamic performance on unconventional substrates for large-area electronics applications, such as displays or sensors.

摘要

首次报道了一种将基于单个碳纳米管的场效应晶体管和基于真空蒸发碳膜的负载电阻器整体集成到玻璃衬底上的快速单极性逻辑电路的制造工艺。单个碳纳米管晶体管的栅源和漏源电压相对较小,为 1V,并且具有较大的跨导(高达 6μS)、较大的 ON/OFF 比(>10^4)和较短的开关延迟时间常数(12ns)。薄膜碳负载电阻器提供线性电流-电压特性和 300kΩ 至 100MΩ 之间的电阻,具体取决于电阻器的布局和真空蒸发碳膜的厚度。已经制造和表征了各种组合电路(NAND、NOR、AND、OR 门)以及一个时序电路(S-R NAND 锁存器)。尽管这些单极性电路在集成密度和静态功耗方面无法与优化的互补电路竞争,但它们为在非常规衬底上实现具有有前途的静态和动态性能的空气稳定、低压集成电路提供了可能性,适用于大面积电子应用,如显示器或传感器。

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