Nanotechnology Group, Institute of Microsystems Engineering (IMTEK), Albert-Ludwigs-University Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg, Germany.
ACS Appl Mater Interfaces. 2010 Dec;2(12):3473-8. doi: 10.1021/am100592f. Epub 2010 Nov 3.
A versatile, low-cost, and flexible approach is presented for the fabrication of millimeter-long, sub-100 nm wide 1D nanochannels with tunable wall properties (wall thickness and material) over wafer-scale areas on glass, alumina, and silicon surfaces. This approach includes three fabrication steps. First, sub-100 nm photoresist line patterns were generated by near-field contact phase-shift lithography (NFC-PSL) using an inexpensive homemade borosilicate mask (NFC-PSM). Second, various metal oxides were directly coated on the resist patterns with low-temperature atomic layer deposition (ALD). Finally, the remaining photoresist was removed via an acetone dip, and then planar nanochannel arrays were formed on the substrate. In contrast to all the previous fabrication routes, the sub-100 nm photoresist line patterns produced by NFC-PSL are directly employed as a sacrificial layer for the creation of nanochannels. Because both the NFC-PSL and the ALD deposition are highly reproducible processes, the strategy proposed here can be regarded as a general route for nanochannel fabrication in a simplified and reliable manner. In addition, the fabricated nanochannels were used as templates to synthesize various organic and inorganic 1D nanostructures on the substrate surface.
提出了一种通用、低成本且灵活的方法,可在玻璃、氧化铝和硅片表面上的晶圆级大面积上制造具有可调壁特性(壁厚度和材料)的毫米长、亚 100nm 宽的 1D 纳米通道。该方法包括三个制造步骤。首先,通过近场接触相移光刻(NFC-PSL)使用廉价的自制硼硅酸盐掩模(NFC-PSM)生成亚 100nm 光刻胶线条图案。其次,各种金属氧化物通过低温原子层沉积(ALD)直接涂覆在光刻胶图案上。最后,通过丙酮浸泡去除剩余的光刻胶,然后在基底上形成平面纳米通道阵列。与所有以前的制造路线不同,由 NFC-PSL 产生的亚 100nm 光刻胶线条图案被直接用作创建纳米通道的牺牲层。由于 NFC-PSL 和 ALD 沉积都是高度可重复的过程,因此这里提出的策略可以被视为以简化和可靠的方式制造纳米通道的通用方法。此外,所制造的纳米通道可用作模板,在基底表面上合成各种有机和无机 1D 纳米结构。