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在砷化镓中蚀刻的小特征尺寸扇出型基诺全息图。

Small-feature-size fan-out kinoform etched in GaAs.

作者信息

Bengtsson J, Eriksson N, Larsson A

出版信息

Appl Opt. 1996 Feb 10;35(5):801-6. doi: 10.1364/AO.35.000801.

Abstract

A binary fan-out kinoform for focusing and splitting an incident beam into a 4 × 4 spot array, with a largest deflection angle of 28°, was designed, fabricated in GaAs, and evaluated. The kinoform was defined in resist with electron-beam lithography and etched into GaAs with chemically assisted ion-beam etching. Light at wavelength 0.98 µm from a single-mode fiber was used to illuminate the kinoform. The efficiency was measured to be 34%, and the uniformity error for the 4×4 spots was 29%. Although the typical feature size of the kinoform is only roughly two wavelengths, we found that the scalar theory of diffraction can be used. A first kinoform was designed with the customary Fresnel-diffraction theory, which was found to be too coarse, resulting in a fan-out exhibiting some distortion. A second kinoform was designed with the more rigorous Fresnel-Kirchhoff expression, and its fan-out shows no distortion.

摘要

设计、制作并评估了一种用于将入射光束聚焦并分裂成4×4光斑阵列的二元扇出型相息图,其最大偏转角为28°。该相息图采用电子束光刻技术在光刻胶中定义,并通过化学辅助离子束蚀刻工艺蚀刻到砷化镓中。使用来自单模光纤的波长为0.98 µm的光照射该相息图。测量得到的效率为34%,4×4光斑的均匀性误差为29%。尽管相息图的典型特征尺寸仅约为两个波长,但我们发现可以使用标量衍射理论。第一个相息图采用传统的菲涅耳衍射理论设计,结果发现过于粗糙,导致扇出出现一些失真。第二个相息图采用更严格的菲涅耳 - 基尔霍夫表达式设计,其扇出没有失真。

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