Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan.
Nanotechnology. 2010 Dec 10;21(49):495201. doi: 10.1088/0957-4484/21/49/495201. Epub 2010 Nov 11.
In this study, the resistive switching characteristics of a ZrO(2)-based memory film with an embedded Mo layer are investigated. The experimental results show that the forming process can be removed by inserting an embedded Mo metal layer within ZrO(2) via a post-annealing process. The excellent memory performance, which includes lower operation voltage (<1.5 V), good endurance (>10(3) cycles), a stubborn nondestructive readout property (>10(4) s), and long retention time (>10(7) s), is also demonstrated. Moreover, high-speed operation (10 ns) can be successively maintained over 10(3) cycles without any operational errors observed in this memory device. Due to the interface layer induced by the Ti top electrode, the formation and rupture of conducting filaments are suggested to occur near the Ti/ZrO(2) interface. The oxygen vacancies induced by the embedded Mo can enhance the formation of conducting filaments and further improve the switching characteristics in ZrO(2)-based devices.
在这项研究中，研究了具有嵌入式 Mo 层的 ZrO(2)基忆阻器的电阻开关特性。实验结果表明，通过后退火工艺在 ZrO(2)中嵌入 Mo 金属层可以去除形成过程。该忆阻器还表现出优异的记忆性能，包括较低的操作电压（<1.5 V）、良好的耐久性（>10(3) 次循环）、顽固的无损读取特性（>10(4) s）和长保持时间（>10(7) s）。此外，在该存储器件中没有观察到任何操作错误的情况下，该存储器可以在 10(3) 个周期内连续保持高速操作（10 ns）。由于 Ti 顶电极引起的界面层，建议导电线在 Ti/ZrO(2)界面附近形成和破裂。嵌入 Mo 引起的氧空位可以增强导电线的形成，从而进一步改善 ZrO(2)基器件的开关特性。
