School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.
Wuhan National Laboratory for Optoelectronics, Wuhan, 430074, China.
Sci Rep. 2017 Aug 30;7(1):10070. doi: 10.1038/s41598-017-09413-9.
The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO, given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized binary and multi-level memristors in unified HfO material have not been studied. Here we report Pt/HfO/Ti memristors with double memristive modes, forming-free and low operation voltage, which were tuned by oxidation conditions of HfO films. As O/Hf ratios of HfO films increase, the forming voltages, SET voltages, and R/R windows increase regularly while their resistive transitions undergo from gradually to sharply in I/V sweep. Two memristors with typical resistive transitions were studied to customize binary and multi-level memristive modes, respectively. For binary mode, high-speed switching with 10 pulses (10 ns) and retention test at 85 °C (>10 s) were achieved. For multi-level mode, the 12-levels stable resistance states were confirmed by ongoing multi-window switching (ranging from 10 ns to 1 μs and completing 10 cycles of each pulse). Our customized binary and multi-level HfO-based memristors show high-speed switching, multi-level storage and excellent stability, which can be separately applied to logic computing and neuromorphic computing, further suitable for in-memory computing chip when deposition atmosphere may be fine-tuned.
忆阻器是下一代非易失性存储器的候选者，特别是基于 HfO 的忆阻器，因为它与先进的 CMOS 技术兼容。尽管已经独立报道了各种电阻转变，但在统一的 HfO 材料中定制的二进制和多级忆阻器尚未被研究。在这里，我们报告了 Pt/HfO/Ti 忆阻器，具有双忆阻模式、无形成和低工作电压，其通过 HfO 薄膜的氧化条件进行调节。随着 HfO 薄膜中 O/Hf 比值的增加，形成电压、SET 电压和 R/R 窗口逐渐增加，而其电阻转变在 I/V 扫描中从逐渐变为急剧。研究了两个具有典型电阻转变的忆阻器，分别定制二进制和多级忆阻模式。对于二进制模式，实现了 10 个脉冲（10 ns）的高速开关和 85°C（>10 s）的保持测试。对于多级模式，通过持续的多窗口开关（范围从 10 ns 到 1 μs，每个脉冲完成 10 个循环）确认了 12 个稳定的电阻状态。我们定制的二进制和多级 HfO 基忆阻器具有高速开关、多级存储和优异的稳定性，可分别应用于逻辑计算和神经形态计算，进一步适用于沉积气氛可微调的内存计算芯片。
