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氧化铟锡@碳核壳纳米线与锯齿状氧化铟锡纳米线

Indium Tin Oxide@Carbon Core-Shell Nanowire and Jagged Indium Tin Oxide Nanowire.

作者信息

Wang Yong, Lu Liqiang, Wu Fengdan

机构信息

Department of Chemical Engineering, School of Environmental and Chemical Engineering, Shanghai University, Shangda Road 99, 200444 Shanghai, People's Republic of China.

出版信息

Nanoscale Res Lett. 2010 Jul 17;5(10):1682-5. doi: 10.1007/s11671-010-9695-x.

DOI:10.1007/s11671-010-9695-x
PMID:21076705
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC2956033/
Abstract

This paper reports two new indium tin oxide (ITO)-based nanostructures, namely ITO@carbon core-shell nanowire and jagged ITO nanowire. The ITO@carbon core-shell nanowires (50 nm in diameter, 1-5 μm in length,) were prepared by a chemical vapor deposition process from commercial ITO nanoparticles. A carbon overlayer (5-10 in thickness) was observed around ITO nanowire core, which was in situ formed by the catalytic decomposition of acetylene gas. This carbon overlayer could be easily removed after calcination in air at an elevated temperature of 700°C, thus forming jagged ITO nanowires (~40-45 nm in diameter). The growth mechanisms of ITO@carbon core-shell nanowire and jagged ITO nanowire were also suggested.

摘要

本文报道了两种基于氧化铟锡(ITO)的新型纳米结构,即ITO@碳核壳纳米线和锯齿状ITO纳米线。ITO@碳核壳纳米线(直径约50纳米,长度为1 - 5微米)通过化学气相沉积法由商业ITO纳米颗粒制备而成。在ITO纳米线芯周围观察到一层碳覆盖层(厚度约5 - 10纳米),它是由乙炔气体的催化分解原位形成的。在700°C高温下于空气中煅烧后,该碳覆盖层可轻松去除,从而形成锯齿状ITO纳米线(直径约40 - 45纳米)。文中还提出了ITO@碳核壳纳米线和锯齿状ITO纳米线的生长机制。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9713/3241470/23aa9c2115c6/1556-276X-5-1682-5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9713/3241470/a4152cd2d4c1/1556-276X-5-1682-1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9713/3241470/f0ab7ba3191a/1556-276X-5-1682-2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9713/3241470/1fd40af62418/1556-276X-5-1682-3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9713/3241470/3d5727b2274c/1556-276X-5-1682-4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9713/3241470/23aa9c2115c6/1556-276X-5-1682-5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9713/3241470/a4152cd2d4c1/1556-276X-5-1682-1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9713/3241470/f0ab7ba3191a/1556-276X-5-1682-2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9713/3241470/1fd40af62418/1556-276X-5-1682-3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9713/3241470/3d5727b2274c/1556-276X-5-1682-4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9713/3241470/23aa9c2115c6/1556-276X-5-1682-5.jpg

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本文引用的文献

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Nanoscale Res Lett. 2010 Feb 4;5(3):539-544. doi: 10.1007/s11671-010-9544-y.
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Magnetoresistance in Sn-Doped In2O3Nanowires.掺锡氧化铟纳米线中的磁电阻。
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High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel.采用混合栅介质和非晶态锌铟锡氧化物沟道的高性能柔性透明薄膜晶体管。
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Three-dimensional electrodes for dye-sensitized solar cells: synthesis of indium-tin-oxide nanowire arrays and ITO/TiO2 core-shell nanowire arrays by electrophoretic deposition.用于染料敏化太阳能电池的三维电极:通过电泳沉积法合成铟锡氧化物纳米线阵列和ITO/TiO₂核壳纳米线阵列
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One-step, confined growth of bimetallic tin-antimony nanorods in carbon nanotubes grown in situ for reversible Li+ ion storage.原位生长的碳纳米管中双金属锡锑纳米棒的一步受限生长用于可逆锂离子存储
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