Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
Nanotechnology. 2010 Dec 17;21(50):505301. doi: 10.1088/0957-4484/21/50/505301. Epub 2010 Nov 22.
A study of the dewetting behavior of platinum-thin-films on silicon was carried out to determine how variation of dewetting parameters affects the evolution of film morphology and to pinpoint which parameters yielded the smallest, most circular features. Platinum film thickness as well as dewetting time and temperature were varied and the film morphology characterized by means of scanning electron microscopy (SEM) analysis. Two different pathways of dewetting predicted in the literature (Vrij 1966 Discuss. Faraday Soc. 42 23, Becker et al 2003 Nat. Mater. 2 59-63) were observed. Depending on the initial criteria, restructuring of the film occurred via hole or droplet formation. With increased annealing time, a transition from an intermediate network structure to separated islands occurred. In addition, the formation of multilayered films, silicide crystals and nanowires occurred for certain parameters. Nevertheless, the dewetting behavior witnessed could be related to physical processes. Droplets with a mean diameter of 9 nm were formed by using a 1.5 nm thick platinum film annealed at 800 °C for 30 s. To demonstrate the suitability of the annealed films for further processing, we then used the dewetted films as masks for reactive ion etching to transfer the pattern into the silicon substrate, forming tapered nanopillars.
对硅上的铂薄膜进行了非润湿行为的研究，以确定非润湿参数的变化如何影响薄膜形貌的演变，并确定哪些参数产生最小、最圆的特征。改变了铂膜的厚度以及非润湿时间和温度，并通过扫描电子显微镜（SEM）分析对膜形态进行了表征。观察到文献中预测的两种不同的非润湿途径（Vrij 1966 Discuss. Faraday Soc. 42 23, Becker 等人 2003 Nat. Mater. 2 59-63）。根据初始标准，通过孔或液滴形成发生薄膜重构。随着退火时间的增加，从中间网络结构到分离的岛发生转变。此外，对于某些参数，形成了多层膜、硅化物晶体和纳米线。然而，观察到的非润湿行为可以与物理过程相关。使用 1.5nm 厚的铂膜在 800°C 下退火 30s 形成了平均直径为 9nm 的液滴。为了证明退火薄膜适用于进一步处理，我们然后将非润湿薄膜用作反应离子刻蚀的掩模，将图案转移到硅衬底中，形成锥形纳米柱。
