Alhalaili Badriyah, Joseph Antony, Al-Hajji Latifa, Ali Naser M, Dean Sowmya, Al-Duweesh Ahmad A
Nanotechnology Application Program, Energy and Building Research Center, Kuwait Institute for Scientific Research, Safat 13109, Kuwait.
American Romanian Academy of Arts and Sciences, Citrus Heights, CA 95616, USA.
Nanomaterials (Basel). 2025 Jul 29;15(15):1169. doi: 10.3390/nano15151169.
A simple and inexpensive thermal oxidation process is used to grow -GaO oxide (-GaO) thin films/nanorods on a -plane (0001) sapphire substrate using Ag/Au catalysts. The effect of these catalysts on the growth mechanism of GaO was studied by different characterization techniques, including X-ray diffraction analysis (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive X-ray analysis (EDX). The XRD results of the grown GaO on a sapphire substrate show three sharp diffraction peaks located at 19.31°, 38.70° and 59.38° corresponding to the 2¯01, 4¯02 and 6¯03 planes of -GaO. Field Emission Scanning Electron Microscope (FESEM) analysis showed the formation of longer and denser GaO nanowires at higher temperatures, especially in the presence of silver nanoparticles as catalysts.
采用一种简单且低成本的热氧化工艺,以Ag/Au催化剂在(0001)蓝宝石衬底的c平面上生长β-Ga₂O₃氧化物(β-Ga₂O₃)薄膜/纳米棒。通过包括X射线衍射分析(XRD)、扫描电子显微镜(SEM)和能量色散X射线分析(EDX)在内的不同表征技术,研究了这些催化剂对β-Ga₂O₃生长机制的影响。在蓝宝石衬底上生长的β-Ga₂O₃的XRD结果显示,在19.31°、38.70°和59.38°处有三个尖锐的衍射峰,分别对应于β-Ga₂O₃的2¯01、4¯02和6¯03晶面。场发射扫描电子显微镜(FESEM)分析表明,在较高温度下,尤其是在存在银纳米颗粒作为催化剂的情况下,会形成更长、更密集的β-Ga₂O₃纳米线。