School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China.
Nanotechnology. 2010 Dec 17;21(50):505203. doi: 10.1088/0957-4484/21/50/505203. Epub 2010 Nov 23.
Cl-doped n-type CdS NWs with single-crystal wurtzite structure and [Formula: see text] growth direction were synthesized by using CdCl(2) as the dopant via a thermal co-evaporation method. By controlling the Cl vapor pressure during the growth, the conductivity of the CdS:Cl NWs can be tuned in a wide range of five orders of magnitude. A nano-photodetector based on the CdS:Cl NWs shows high sensitivity to visible light with excellent stability and reproducibility. Significantly, the photoconductivity of the CdS NWs is greatly enhanced by Cl doping and the responsivity and photoconductive gain of the CdS:Cl NWs have substantially increased compared with the undoped CdS NWs. Further study also demonstrates the polarization-dependent photoconductivity of the CdS:Cl NWs. It is expected that the CdS:Cl NWs with tunable optoelectronic properties will have important applications in high-performance nano-optoelectronic devices.
采用热共蒸发法,以 CdCl2 为掺杂剂,合成了具有单晶纤锌矿结构和[Formula: see text]生长方向的 Cl 掺杂 n 型 CdS NWs。通过控制生长过程中的 Cl 蒸汽压,可以在五个数量级的宽范围内调整 CdS:Cl NWs 的电导率。基于 CdS:Cl NWs 的纳米光电探测器对可见光具有高灵敏度,且具有出色的稳定性和重现性。值得注意的是,Cl 掺杂极大地增强了 CdS NWs 的光电导,与未掺杂的 CdS NWs 相比,CdS:Cl NWs 的响应率和光电导增益有了显著提高。进一步的研究还表明了 CdS:Cl NWs 的偏振相关光电导性。预计具有可调谐光电性能的 CdS:Cl NWs 将在高性能纳光电设备中有重要应用。